Abstract
A theoretical description of axial dechanneling due to a special type of dislocation loops is presented. It is based on the discontinuous model with the displacement field calculated using the theory of Burgers. Using RBS data of Bentini et al. (1987) buried layers of dislocation loops in silicon are analysed. The dependence of the dechanneling on the loop radius and the ion energy is discussed. A behaviour similar to that given by Kudo (1978) was found but the values differ by one order of magnitude.
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