Abstract
The DC conductivity and dielectric properties of glassy Se100–xZnx 2 ≤ x ≤ 20 alloys have been investigated in the temperature range 303 - 487 K with frequency range 100 Hz – 1 MHz. It is observed that DC conductivity decreases and the activation energy increases with Zn content in Se-Zn system. Dielectric dispersion is observed when Zn incorporated in Se-Zn glassy system. The results are explained on the basis of DC conduction mechanism and dipolar-type dielectric dispersion.
Highlights
Chalcogenide Se based is very important due to its current use as photoreceptors in TV Videocon pick-up tubes [1], conventional xerographic machine and digital X-ray imaging [2,3].These types glasses are belongs to a special group of amorphous semiconductors, which include one, two, three and more chalcogenide elements S, Se, Te from the VI group of the periodic table
It is observed that DC conductivity decreases and the activation energy increases with Zn content in Se-Zn system
The values of required energy (Wm) are increases with increase of temperature in the glassy .This is consistent with theory [24] of dielectric relaxation based on the hopping of charge carriers over a potential barrier as suggested by Elliott [25] is applicable in the case of the glassy Se100–xZnx alloy
Summary
Chalcogenide Se based is very important due to its current use as photoreceptors in TV Videocon pick-up tubes [1], conventional xerographic machine and digital X-ray imaging [2,3].These types glasses are belongs to a special group of amorphous semiconductors, which include one, two, three and more chalcogenide elements S, Se, Te from the VI group of the periodic table. The chalcogenide glassy are useful semiconductors point of application in optics, electronics and optoelectronics like as holography, infrared lenses, ionic sensors, ultra fast optical sensors It has been focused on chalcogenide glasses of Se-Zn system [4,5] as the materials have been found importance for their electrical, optical, dielectric and kinetics parameters Stable glasses which have good photosensitive properties have been produced and can be n or p type. The application of high field to free carrier system may affect both the mobility and the number of charge carriers These studies have been stimulated by the attractive possibilities of using the structural disorder in amorphous semiconductors for the development of better, cheaper and more reliable solid state devices [6,7]. We have reported the electrical and dielectric properties of glassy Se100–xZnx alloys
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