Dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Abstract

dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al2O3/Ga2O3(Gd2O3) (GGO) high κ dielectrics and TiN metal gates are reported. MOSFETs with various oxide thicknesses were fabricated. The In0.53Ga0.47As MOSFETs using Al2O3(2 nm)/GGO (5 nm) gate dielectric demonstrated a maximum drain current of 1.05 mA/μm and a peak transconductance of 714 μS/μm, both are the highest values ever reported for enhancement-mode InGaAs MOSFETs with 1 μm gate length. In addition, the same transistors exhibited excellent embedded rf properties and achieved a fT of 17.9 GHz and a fmax of 12.1 GHz. The high-quality in situ MBE growth of high κ dielectrics/InGaAs has attributed to the high device performance.