Abstract
Self-aligned inversion-channel In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors (MOSFETs) using molecular beam epitaxy (MBE) deposited Al2O3/Ga2O3(Gd2O3) [GGO] as gate dielectrics and TiN as metal gates were fabricated. The 1-μm-gate-length In0.75Ga0.25As MOSFETs have achieved a maximum drain current of 1.23mA/μm, a peak transconductance of 464μS/μm, and a peak field-effect electron mobility of 1600cm2/Vs. A new record of maximum drain current has been set, not only for III–V MOSFETs but also for all enhancement mode MOSFETs with similar device dimensions, regardless of channel materials and device configurations.
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