Abstract
Schottky barriers are used extensively in high frequency switching, mixing and rectifying circuit for their good DC and RF characteristics. In this paper we report that devices measured in a double-balance mixer circuit show that the typical value of the DBS noise figure of the mixer diode is 6.1 dB at 89.5 GHz. Very good results were also observed in the 12.5, 8, 5 and 4 mm bands. However, the barrier height is virtually constant and the operation stability depends strongly on the metallurgy of the Schottky contact. In addition, properties of planar doped barrier (PDB) diodes with an n +/i/p +/i/n + configuration grown by molecular beam epitaxy (MBE) with precise control of the barrier height, were also studied. The results of artificial tailored I– V characteristics, junction capacitance and the detector application are also presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
