Abstract
A large band SPDT (single-pole double-throw) switch based on a very advanced RF-MEMS switch technology for redundancy schemes are presented. This device allowed to reach state-of-the-art working bandwidth (DC-50 GHz) and RF performances (IL (Insection loss) 25 dB, and RL > 20 dB). The 200 mm MEMS technology process has demonstrated a very good stability with very low dispersion (deviations < 0.05 dB for the IL and < 0.6 dB for the isolation over the entire wafer and frequency range). An accurate electrical equivalent circuit, modeling the SPDT in the DC-65 GHz frequency band, has allowed to extract a contact resistance which is as low as 1.4 Ω. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:333–335, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27330
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