Abstract
Data, code and plots used in the paper, Temperature dependent polarity inversion in double-metal terahertz emitters Submitted to be published in Electronics Letters.The temperature dependent polarity inversion in double-metal THz emitters was investigated. Double-metal emitters utilising different metal pairings and single edge metal emitters were cooled in a helium flow cryostat and their THz emission was measured over a range of temperatures. Most emitters, including those with insulating layers between the metal and semiconductor, exhibit a flip in polarity of their THz emission between 50 and 100 K. This shows the inversion is a trait intrinsic to the semiconductor and not influenced by the metallic contact on the surface.
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