Abstract
We studied and compared the reverse-bias characteristics of In(Al)GaAs/InAlAs Superlattice Avalanche Photodiodes (SL-APDs) for three types of different well structures. Dark current characteristics were drastically improved in the InAlGaAs quaternary well structure application, compared with InGaAs wells. In the InAlGaAs quaternary well SL-APDs, we observed, for the first time, a linear relation between dark current and multiplication factor. A multiplied dark current of 2.0×10-4 A/cm2 was the lowest values for the SL-APDs. We also confirmed the temperature coefficient of breakdown voltage to be about 3.4×10-4 K-1. This small temperature dependence suggests a distinctive SL-APD avalanche mechanism due to the contribution of large conduction band discontinuity.
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