Damp heat stability of Al-doped zinc oxide films on smooth and rough substrates

Abstract

Properly encapsulated chalcopyrite-based solar modules from a number of manufacturers have passed the accelerated ageing tests in damp heat. Non-encapsulated modules after damp heat exposure show an increased series resistance which is contributed significantly from the increase in lateral sheet resistance of the transparent Al-doped zinc oxide (ZAO) front contact. We have shown previously, that a rough substrate morphology (on a μm-scale) is a major influence in the ZAO degradation mechanism, due to local perturbations of the ZAO growth ( extended grain boundaries). To further model and examine the extended grain boundaries we present a study of the electrical properties of RF-sputtered ZAO films before and after damp heat, grown on rough quartz glass as well as on polished, texture-etched and patterned silicon. The pattern consisted of equidistant trenches and have a periodical two-dimensional geometry. The strongest decrease of ZAO conductivity occurs on the patterned silicon substrate perpendicular to the trenches. The conductivity parallel to the trenches, however, had the same trend as the conductivity of ZAO on smooth silicon. Measured activation energies of the conductivity of 40 meV or less after damp heat are not sufficient to explain the drastic decrease of conductivity in terms of a grain-boundary-barrier theory (as described, e.g., by Seto). We will summarise our current understanding of the extended grain boundaries and present a refined barrier model to explain our experimental observations.