Abstract
We studied the characteristics of junction leakage currents of diodes having buried damage layers formed by high-energy B implantation. The efficiency of the buried layers was evaluated with respect to both microdefect dissolution and gettering of metal impurities. For this purpose, some diodes were contaminated with a uniform concentration of Pt . Results show that high-dose B implants are required for efficient removal of defects and the gettering of metal impurities, while the annealing sequence is fundamental for correct damage engineering.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
