Abstract
In this paper, D-band (110–170 GHz) frequency tripler module is presented using anti-parallel GaAs Schottky diode pair and waveguide-to-microstrip transitions. The anti-parallel diode pair is used as a nonlinear device generating harmonic components for Q-band input signal (33–50 GHz). The diode is zero-biased to eliminate the bias circuits and thus minimize the number of circuit components for low-cost hybrid fabrication. The anti-parallel connection of two identical diodes effectively suppresses DC and even harmonics in the output. Furthermore, the first and second harmonics of Q-band input signal are cut off by D-band rectangular waveguide. Input and output impedance matching networks are designed based on the optimum impedances determined by harmonic source- and load-pull simulations using the developed nonlinear diode model. Waveguide-to-microstrip transitions at Q- and D-bands are also designed using E-plane probe to package the frequency tripler in the waveguide module. The compensation circuit is added to reduce the impedance mismatches by bond-wires connecting two separate substrates. The fabricated frequency tripler module produces a maximum output power of 5.4 dBm at 123 GHz under input power of 20.5 dBm. A 3 dB bandwidth is as wide as 22.5% from 118.5 to 148.5 GHz at the input power of 15.0 dBm. This result corresponds to the excellent bandwidth performance with a conversion gain comparable to the previously reported frequency tripler operating at D-band.
Highlights
Millimeter-wave frequency band ranging from 30 to 300 GHz finds a lot of commercial and military applications such as high-speed wireless communications and high-resolution radar sensors, since it allows for wide bandwidth and small wavelength (10–1 mm)
We develop the nonlinear diode model using the datasheet power at 3rdGaAs harmonic component provided the we vendor electromagnetic simulations
Un‐biased anti‐parallel diode pair was well‐suited for the frequency waveguide transitions
Summary
Millimeter-wave frequency band ranging from 30 to 300 GHz finds a lot of commercial and military applications such as high-speed wireless communications and high-resolution radar sensors, since it allows for wide bandwidth and small wavelength (10–1 mm). This is caused by the transistors of which output powers are inversely proportional to the frequency Another approach to generating millimeter-wave signals is to design frequency multipliers which extract the wanted harmonic frequency component generated by the non-linear devices for high-purity and low-frequency input signal, while rejecting the other unwanted harmonic frequency components [4]. In millimeter-wave frequency above 100 GHz, GaAs Schottky diodes are commonly used for frequency multipliers, since they exhibit very high cut-off frequency and high output powers It has another advantage in that it can be fabricated in the form of low-cost hybrid circuits [5]. The compensation circuit is designed to minimize impedance caused byincluding the bond-wires model, impedance matching of frequency tripler, waveguide transitions, and bond‐wire connecting the circuits in two separate substrates with different width for Q- and D-band transitions.
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