Accurate design of a W-band full band frequency tripler based on anti-parallel GaAs Schottky varistor diode pair

Abstract

This paper presents a W-band frequency tripler based on cost-effective anti-parallel GaAs Schottky varistor diode pair. Aiming at realizing ultra-wide band operation and high efficiency, an efficient approach that combines 3-D full wave EM simulation and circuit model-based harmonic balance simulation is applied to facilitate the circuit design and optimization. The embedding circuits between RF input port and the diode pair and that between the output port and the diode pair have been designed and optimized with the help of an accurate model of the anti-parallel GaAs Schottky diode pair. Special attention has been paid to eliminate power nulls over the full W-band. A prototype of the tripler has been fabricated. With an input driving power of about 20dBm at Ka-band, it delivers about 5dBm output power with a variation of ±1.5 dB across 75–110 GHz frequency range. There is not any power nulls occurred in the full operation band.