Abstract
In this paper, a general gate-all-around (GAA) Tunnel Field Effect Transistor (TFET), TFET with novel extended source and drain structure as core-channel regions have been described. In this work, a comparison of the device performance of the cylindrical nanowire-GAA structure, core-extended source GAA structure and core-extended drain GAA structure is presented. Various device parameters like the non-local band to band tunneling, electron concentration, hole concentration, electric field, potential, the gate-to-gate capacitance and transfer characteristics are analyzed. Other important parameters are linearity parameters, which define the distortions and linearity of the device such as Third-order harmonics distortion (HD3), Third-order current intercept point (IIP3), Third-order intermodulation distortions (IMD3) and Third-order Voltage intercept point (VIP3). The increased gate control is observed in the core-extended source/drain structure. The core-extended based source-drain structure has improved the subthreshold by 5 mV/dec and ON-state current by 2 folds. The proposed design can help in improving the gate-all-around structure in terms of analog and linear characteristics.
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