Abstract
Despite the increasing interest in graphene, a less studied aspect is the enhancement of silicon (Si) performances due to the interaction with graphene-based materials. In this study, cyclic voltammetry and electric impedance measurements are performed on graphene oxide (GO) dip-coated on n-type and p-type Si samples. The electrical properties of GO on n-type Si samples are dramatically enhanced: The conductivity and the photocurrent meaningfully increase in comparison to bare n-type Si. Such findings could be used in a wide variety of optoelectronic applications, improving GO future applicability in the Si semiconductor industry.
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