Abstract
The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the free-standing GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating was formed into an n-type cladding layer. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The threshold current and the slope efficiency were 22 mA and 1.44 W/A under cw operation at 25 °C, respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 to 85 °C at an output power of 20 mW.
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