First-Order AlInGaN 405 nm Distributed Feedback Laser Diodes by Current Injection

Abstract

The first-oreder AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the c-face sapphire substrates by a metalorganic chemical vapor deposition method. The diffractive grating, which was shaped by 108 nm deep grating of an 85.7 nm period with a sidewall angle 89°, was formed into a p-type waveguiding layer. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes by pulsed current injection. The threshold current and the peak lasing wavelength of the DFB laser diode were 190 mA and 403.7 nm under pulsed current operation at 25 °C, respectively. The lasing spectrum was kept the single longitudinal mode emission up to an output power of 30 mW.