Abstract
Au/poly (linoleic acid)-g-poly(methyl methacrylate)(PLiMMA)/n-Si diode was fabricated and current-voltage (I-V) characteristics of this diode were measured in dark and under 365nm ultra violet (UV) irradiation at room temperature. Main electrical parameters; such as leakage current (Io), ideality factor (n), zero-bias barrier height (ΦBo) and surface states density (Nss) were calculated using thermionic emission theory to obtain UV irradiation intensity dependence of these parameters. Also alternatively n, barrier height (ΦB) and series resistance (Rs) was calculated by Cheung&Cheung method. These alternatively obtained values were given and compared with the literature.
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