Abstract
In this work, p-CuO/n-Si hetero-junction contacts were produced by thermal evaporation technique and current–voltage (I-V) characteristics of the junctions were investigated at room temperature. It has been observed that the structures exhibit diode characteristics and diode parameters such as ideality factor, effective barrier height and series resistance were calculated from the forward bias I-V characteristics and Cheung Functions were used to check the consistency of the results. Norde’s functions combined with the forward I-V method has been used to extract the parameters. The barrier height and series resistance values obtained from Norde’s function have been compared with those from Cheung functions. It has been seen that there are a good agreement between the barrier height values from both method, but the series resistance values obtained from Norde’s functions are considerably larger than those of Cheung functions. Also, photovoltaic characterization of the junctions was made from current density–voltage (J-V) characteristics under AM 1.5 illumination (100 mW.cm−2).
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