Abstract
Gas cluster ion beam technology employs accelerated ions consisting of clusters of a few hundreds to thousands of atoms (gas cluster ion beam technology, GCIB). This paper reviews recent novel GCIB process applications for (i) ultra-shallow junction (USJ) formation and doping in Si, (ii) surface smoothing of metals, (iii) selective smoothing of SOI, SiC and other compound semiconductor films, (iv) IC back end of the line (BEOL) processing and (v) high quality thin multi-layer film formation for reliable and durable optical filters.
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