Abstract
Emerging nonvolatile memory technology based on resistive switching random access memory, especially conductive-bridge random access memory (CBRAM), has become a proficient contender for the replacement of charge-based flash memory technology in certain applications. In this brief, we present the detailed characterization and analysis of programming current consumption of CBRAM chips. We found that trends in write current consumption specific to bit switching order exist, with local and global minima for 2- or 3-bit switching. We further characterized in detail, the programming current consumption for specific 2- or 3-bit switching combinations. We then propose a new encoding algorithm: current optimized coset coding (CoCC), which exploits the observed unique current consumption signatures of the technology for programming current minimization. Experimental validation of the proposed algorithm showed an overall current reduction of ~6% in case of random data-write cycling experiments.
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