Abstract

We investigate the current induced depinning of magnetic domain walls (DWs) trapped at the kinks in a patterned Py nanowire with two-kink zigzag shape on Si/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> substrate. By injecting pulse current with varying amplitude, two threshold current densities with a slight difference of around 6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> A m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> have been determined according to the different depinning process. The smaller threshold current density corresponds to the depinning of a single DW which is always the first DW facing to the electron flow. This fact indicates that the different pinning potential caused by the structural asymmetry is not the key to determine which DW is to depin. Micromagnetic simulations provide evidence that the specific current-driven behavior of the vortex DW might account for the single depinning process. The larger threshold corresponds to the simultaneous depinning of two DWs which has been commonly observed in a variety of shaped nanowires.

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