Abstract
Thin film current controlled negative differential resistance (CNDR) devices using amorphous (a)-CdAs 2 as the active material have been fabricated and studied in detail. Comparison of the data on temperature dependence of the turnover voltage V T with data on low field conductivity has shown that the turnover mechanism arises from Joule heating, with bulk space charge limited current effects setting in for thin (<1 μ m) film devices operated below room temperature. Measurements made as a function of device area and a-CdAs 2 film thickness lend further support to this conclusion. Additional data on fabrication yield and uniformity show that large area arrays of a-CdAs 2 CNDR devices are feasible.
Published Version
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