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Abstract
Current-controlled negative differential resistance (CC-NDR) phenomenon attracts a lot of interest for fabricating the access devices of nonvolatile memory based on crossbar array architectures. However, simple, bipolar, two-terminal commercial devices that exhibit CC-NDR are currently lacking because a number of critical characteristics needed to be met for such application. Here, we report the CC-NDR observed in Mn1.56Co0.96Ni0.48O4 (MCNO)- a small-polaron hopping material. Our experimental data and simulation reveal that the CC-NDR arises from self-heating effect due to the nature of strong electron-phonon coupling in small-polaron hopping system. The reported CC-NDR exhibits adjustable threshold voltage from 10-3 to 102 V, on-state current from 105 to 108 A/cm2 and off-state current is as low as ∼10 A/cm2 depending on device dimensions, thermal isolation condition, environmental temperature and activation energy of material. Uniquely, unlike in NbO2, Nb2O5, TiO2, TaOx et. al. materials, the CC-NDR in MCNO is more stable and reliable, because it does not undergo any electroforming process. These traits make MCNO a very potential candidate for CC-NDR devices.
Highlights
The phenomenon of current-controlled negative differential resistance (CC-NDR) or called S-NDR possesses great potential to develop many functional devices
The reported Current-controlled negative differential resistance (CC-NDR) exhibits adjustable threshold voltage from 10-3 to 102 V, on-state current from 105 to 108 A/cm2 and off-state current is as low as ∼10 A/cm2 depending on device dimensions, thermal isolation condition, environmental temperature and activation energy of material
The selectors for nonvolatile crosspoint memory must meet a number of critical characteristics i.e. high on-state current density, off-state leakage current needs to be as low as possible, bidirectional operation, fabricating process compatibility, voltage compatibility with the memory element, all other properties including switching speed, cycling endurance, array yield, and variability of the access device should be better than that of the memory element
Summary
The phenomenon of current-controlled negative differential resistance (CC-NDR) or called S-NDR (because the shape of I-V curve is similar with “S”) possesses great potential to develop many functional devices. A prime example is the access device or called selectors for crosspoint memory due to its remarkable nonlinearity of I-V characteristics.. The selectors for nonvolatile crosspoint memory must meet a number of critical characteristics i.e. high on-state current density, off-state leakage current needs to be as low as possible, bidirectional operation, fabricating process compatibility, voltage compatibility with the memory element, all other properties including switching speed, cycling endurance, array yield, and variability of the access device should be better than that of the memory element.. We first report the CC-NDR phenomenon in small-polaron hopping material Mn1.56Co0.96Ni0.48O4 (MCNO) in experiment and in numerical calculations. The CCNDR in MCNO which arises from the combination of self-heating and the nature of strong electron-phonon coupling in small-polaron hopping system exhibits adjustable attributes at large range which may meet the needs for different nonvolatile memory and does not accompany any electroforming process, so it could be more stable and reliable
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