Abstract
Experiments have shown that either current-controlled negative differential resistance (CNDR) or threshold switching (TS) devices can be fabricated from a given chalcogenide glass. Device behaviour (CNDR versus TS) is controlled by the geometry of the thin film device, and is interpreted as arising from differences in the thermal boundary conditions between the various geometries. When lateral thermal instabilities are precluded, CNDR behaviour is obtained, and when such instabilities are allowed, TS behaviour is obtained. These results are predicted by consideration of the rate of entropy production in the device, thus confirming that it is device geometry and not choice of the material that governs whether CNDR or TS behaviour will be displayed.
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