Abstract
Cupric (CuO) and cuprous (Cu2O) oxide thin films have been deposited by reactive ion beam sputter deposition at 400°C with an Ar:O2 ratio from 2:1 to 12:1. With an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films were obtained. Decreasing oxygen flow rate results in CuO+Cu2O and Cu2O+Cu mixed thin films. As Ar:O2 ratio reaches 12:1, Cu2O nanorods with diameter of 250nm and length longer than 1μm were found across the sample. Single phase CuO thin film exhibits an indirect band gap of 1.3eV with a smooth surface morphology. CuO metal–semiconductor–metal (MSM) Schottky photodiodes (PD) were fabricated by depositing Cu interdigitated electrodes on CuO thin films. Photosensing properties of the CuO PD were characterized from 350 to 1300nm and a maximum responsivity of 43mA/W was found at λ=700nm. The MSM PD is RC limited with a decay time constant less than 1μs.
Published Version
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