Abstract
This experiment used photovoltaic devices of non-vacuum process preparation of copper indium gallium sulfur (Cu(InGa)S2,CIGS) absorber layer. CIGS ink was prepared using wet- ball milling, and then the ink is deposited on substrate to form a precursor layer by spin coating. The precursor layer was then made to reach with heat treatment to form the chalcopyrite structure. The ink consisted of three binary compound powers, CuS, In2S3 and Ga2S3. By adjusting the ratio of different powders, we can obtain a Cu-poor and a Cu-rich type with CIGS thin film by rapid thermal process without toxic atmosphere and endanger the environment solvent. CIGS thin film was characterized by XRD, SEM, EDS, ICP-MS, UV-Vis and PL. From the experimental results found that as temperature increasing, the grain size will grow. Thermal annealing for 10 min at 700 oC was performed by RTP. The mean crystallite size, calculated from the full width at half maximum of the (112) diffraction peak, increases with the copper concentration. Band gap was increases with the copper content. Based on the analysis results of this experiment, CIGS thin film with chalcopyrite structure can be obtained by heating at 700 oC for 10 min.
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