Abstract
The thesis is focused on the application of CuGaS2 for solar cell absorber layer materials. In this study, the nanoparticle ink is prepared using wet-ball milling, and then the ink is deposited on a substrate to form a precursor layer by spin coating. The ink consists of two compound powders, CuS and Ga2S3. By adjust Cu/Ga ratio of CuS to Ga2S3. The precursor layer is placed in RTA furnace, and then heated at the temperature between 400℃ and 800℃ to form the compound layer with chalcopyrite structure. Non-vacuum processing is capable of reducing the cost of manufacturing significantly. CGS2 thin film with the full width at half maximum becoming narrow as the Cu content increases. The mean crystallite size also increases when Cu/Ga ratio is increased. Some displacement towards higher diffraction angles is detected when the Cu content increases. According to the original composition of Cu/Ga ratio, the prepared precursor samples can be classified to two types: Cu-rich and Cu-poor samples based. Microstructural studies are carried out using X-ray diffractometer. The analysis result shows that these samples have chalcopyrite structure. We have developed a novel technique for fabricating CuGaS2 thin film without long heat treatment and selenization. Based on the analysis results of this experiment, CuGaS2 thin film with chalcopyrite structure can be obtained by heating at 650℃ for 10 minutes.
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