銅銦鋁硒（CIAS）光伏元件吸收層薄膜之製備與特性研究

Abstract

The study is focused on the application of CuIn1-xAlxSe2 for solar cell absorber layer. The nanoparticle ink is preparing using wet ball milling, and then the ink is deposited on a substrate to form a precursor layer. The precursor is heated to become semiconductor layer with chalcopyrite structure. The ink consists of three compound powders, such as CuSe, In2Se3, and Al2Se3. By adjusting the ratio of different powders, we can obtain the CIAS thin film by rapid thermal process in absence of Se or H2Se atmosphere. According to some related literatures, with x increasing, CuIn1-xAlxSe2 has larger energy gap to form the optimized the spectral absorption profile. We prepared three thin film with x=0.1, x=0.2, and x=0.3, respectively. The samples, characterized by X-ray diffract meter, has chalcopyrite structures. We found that as temperature increasing, the grain size will grow, and (112) peak in X-ray diffraction pattern will shift to higher angle. The research result dedicate that the CuIn1-xAlxSe2 precursor layer will transform into Chalcopyrite structure through a short hot treatment. Chalcopyrite structure can be achieved by heating at 400C for 10 minutes without Se or H2Se atmosphere.