Cu2ZnSn(S,Se)4 thin film solar cells using printing and high-pressure sintering process

Abstract

We fabricated Cu2ZnSn(S,Se)4 (CZTSSe) solar cells by a screen printing and high-pressure sintering (PHS) process. CZTSSe powders with a Cu-poor and Zn-rich composition of Cu1.9Zn1.25Sn(S0.4Se0.6)4.5 were synthesized by mixing the elemental powders and post-heating at 200–600 °C. Then, we fabricated CZTSSe films by PHS. The obtained CZTSSe films were post-annealed at 550–600 °C for 10 min under various atmospheres. The CZTSSe solar cell with a device structure of Ag/indium tin oxide (ITO)/i-ZnO/CdS/CZTSSe/Mo/soda-lime glass showed an efficiency of 2.63%, with an open circuit voltage (Voc) of 372 mV, a short circuit current density (Jsc) of 18.7 mA/cm2, and a fill factor (FF) of 37.8%.