Abstract
Crystallization of amorphous Si films on a glass substrate by Si+ implantation (acceleration energy: 180 keV, beam current density: 10 μA/cm, ion dose: 1×1017 ions/cm2) was performed without external heating of the substrate. Transmission electron microscopy images of the crystallized specimens lead to the following conclusions: (1) crystallization was achieved through bulk nucleation by Si+ implantation, which is a low temperature and rapid process compared with the ordinary thermal process, (2) the crystallization is strongly related to the ion-solid interaction, not due to ‘‘pure’’ thermal annealing by ion beam heating.
Full Text
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call