Abstract
A novel approach to crystal growth from a molten solution zone (MSZ) is presented. There are five variants of CAM-S, which is a modification of the travelling heater method (THM), which can solve crystal growth problems as THM does, especially synthesis, repeated creation of the MSZ, zoning operations with vibrational stirring, and perform all these operations in situ. The combination of CAM-S with calculation method of optimal molten-solution composition (COM-S) has been applied to the growth of bulk crystals of the ternary solid solutions Ga x In 1− x Sb. Extreme constancy of the lattice parameter throughout the crystalline length has been achieved. Both methods are based on the knowledge of phase diagrams.
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