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Abstract
The conditions of the growth of single crystals of CdTe produce marked changes in their thermal conductivities. This study shows the influence of some specific parameters of the growth conditions: (i) material purity, and (ii) growth temperature and growth rate on the microprecipitate concentration (S?1014 cm−3 with a?100 Å) in CdTe obtained by the ’’traveling heater method’’. An upper limit of the homogeneity region is deduced that takes into account all the defects, including nonelectrically active ones.
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