Abstract
Crystallisation onset temperatures as a function of chlorine contamination have been determined by grazing incidence diffraction on as-deposited ultra-thin HfO2 films grown by Atomic Layer Deposition. The onset temperatures are positively correlated with chlorine content, suggesting defect-hindered crystallisation kinetics. Density profiles have been deduced by reflectometry measurements and a model independent analysis scheme. It is shown that the HfO2/SiO2-Si interface is electronically denser than the bulk of the HfO2 film.
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Schedule a callMore From: The European Physical Journal B - Condensed Matter and Complex Systems
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