Abstract

We analyzed microstructure of as-deposited and rapid thermal annealed HfO2 and HfxSi1-xOy dielectric films with Ru gate electrode. As-deposited films exhibited dielectric constant 12 and 20 for HfxSi1-xOy and HfO2, respectively. TEM and grazing incidence XRD revealed that as-deposited HfO2 films have polycrystalline character, while HfxSi1-xOy films are amorphous. Rapid thermal annealing makes favourable growth of monoclinic HfO2 phase in HfO2 films and tetragonal or orthorhombic phase in HfxSi1-xOy films

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