Abstract
The crystallinity of double-layered polycrystalline silicon thin films crystallized by solid green laser annealing (GLADLAX poly-Si) was evaluated in comparison with that of the conventional green-laser-annealed single-layer poly-Si (GLA SL poly-Si) by reflectance peak mapping measurement of microwave photoconductivity decay (µ-PCD), which measures the recombination lifetime of photoexcited carriers. As a result, the anisotropy of the poly-Si was observed as a difference in the reflectance-peak. Furthermore, the upper layer of the GLADLAX poly-Si had a larger microwave reflectance-peak compared with the GLA single-layer poly-Si, and correlation was confirmed between the reflectance-peak of the poly-Si and the electrical performance of thin film transistor (TFT). Thus, it can be said that crystallinty evaluation by µ-PCD measurement are promising for application to next-generation low-temperature poly-Si TFTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
