Crystalline state information from secondary ion mass spectrometry

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Secondary ion mass spectrometry (SIMS) is used to study boron-doped silicon [100] wafers with a surface amorphous layer caused by the implantation of arsenic. When certain instrumental conditions are used, sample charging is observed at a depth of 1400 Å, corresponding to the end of the amorphous layer. The same sample was then regrown using rapid thermal annealing. In the subsequent SIMS analysis, the charging occurs at 2600 Å depth, corresponding to the p-n junction. Therefore, the depth of the rectifying barrier is strongly affected by the crystalline state of the sample, and the use of SIMS for obtaining information about the crystalline state in ion-implanted p-n materials is demonstrated.