Abstract
Boron nitride (BN) was deposited on (100) silicon wafers by using an ion beam assisted deposition system comprised of an electron beam evaporator and a Kaufman ion source. The intensities of XRD-peaks on turbostratic-BN and IR-peaks on hexagonal-BN increased with increasing nitrogen ion beam energy, and decreased after reached a maximum value on a BN film deposited at 2keV. On the other hand, a XRD-peak on (100) cubic-BN first was measured on a BN film deposited at 3keV.
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