Abstract
Aluminum nitride (AlN) thin film was grown by plasma enhanced atomic layer deposition using trimethylaluminum and ammonia precursors. A method was found to have crystalline thin film AlN with almost zero thickness variation and a truly one layer deposition of atoms per each cycle of the process. The growth rate saturated at ∼ 1 Å/cycle, and the thickness was proportional to the number of reaction cycles. The preferred crystal orientation, uniformity of the nucleation and the surface roughness of the grown AlN were investigated. X-ray diffraction (XRD), atomic focused microscopy (AFM) and scanning electron microscopy (SEM) were carried out to analyze the crystallinity and properties of the films.
Highlights
Aluminium nitride (AlN) is a piezoelectric material with high band gap (∼6.2 eV) [1], high thermal conductivity [2], high electric resistance (1013Ω cm), as well as low expansion at high temperatures [3]
We report the crystalline growth of Aluminum nitride (AlN) thin films by Plasma enhanced atomic layer deposition (PE-ALD) using TMA and ammonia (NH3) as the aluminum and nitrogen source, respectively
The crystallinity and surface roughness of the grown film was investigated by X-ray diffraction (XRD) measurement and atomic force microscopy (AFM), respectively
Summary
Aluminium nitride (AlN) is a piezoelectric material with high band gap (∼6.2 eV) [1], high thermal conductivity [2], high electric resistance (1013Ω cm), as well as low expansion at high temperatures [3]. We report the crystalline growth of AlN thin films by PE-ALD using TMA and ammonia (NH3) as the aluminum and nitrogen source, respectively.
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