Abstract
We have studied the texture evolution of Aluminum nitride (AlN) thin. AlN thin films were deposited on Si (100) substrate by dc magnetron sputtering (dcMS) and High Power Impulse Magnetron Sputtering (HiPIMS) technics. The growth of AlN thin films is observed to occur in two phases, stable hexagonal phase (AlN_H) and cubic phase (AIN_C). For HiPIMS method the fiber (0001) can be considered as perfect with low dispersion while the dcMS gives an asymmetric fiber. AlN_H thin films deposited by dcMS presents preferred orientations and the fiber (0001) is less homogenous with more dispersion. For AlN_C, our first results show its presence in all samples, suggesting that it is reoriented under stress effect in both dcMS and HiPIMS.
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