Abstract
A floating zone (FZ) silicon wafer produced from a Czochralski (CZ) single-crystal ingot was subjected to prolonged annealing at a high temperature. Precipitates were formed in a N2(70%)+O2(30%) ambient atmosphere. The precipitate regions manifested themselves as dark concentric rings in the X-ray topographs. According to the results of cross-sectional transmission electron microscopy observations and energy-dispersive X-ray spectroscopy elemental analyses, nitrogen was distributed throughout the precipitate regions, while oxygen was rich in the periphery of the regions. A high concentration of nitrogen was also directly detected by secondary ion mass spectrometry in the mid-depth of the wafer in the precipitate regions. Electron diffraction analysis of the precipitates showed that their phase was α-Si3N4.
Published Version
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