Abstract
Temperature dependences of time-resolved picosecond beam coupling gains and losses in semi-insulating undoped GaAs and CdTe:Ga are investigated experimentally at a wavelength of 1.064 μm. In the temperature range of 283–363 K a weak temperature dependence of the free-carrier energy transfer gain is observed at high fluence excitation, while photorefractive beam coupling gains and nonlinear absorption losses are found to exhibit no clear temperature dependence. A numerical simulation of the dynamics of photoexcited carriers and space-charge fields is also performed in order to examine the experimental results.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
