Abstract
{100} oriented Pb(Zr,Ti)O3 (PZT) thin films were deposited by metalorganic chemical vapor deposition on both Ir/MgO(100) and Ir/MgAl2O4/SiO2/Si(100) substrates. The x-ray Φ-scan spectra for the (202) reflections revealed each film had fourfold symmetry, which was epitaxially grown as cube-on-cube. The switchable polarization (Qsw) of the PZT capacitor on the MgO substrate attained 100 μC/cm2 at 1.8 V; however, PZT capacitors on Si had a Qsw of 23 μC/cm2. This difference in Qsw is attributed to the volume fraction of (001) orientation of each PZT film. The difference in orientation between the two kinds of PZT films does not seem to depend on misfit of lattice parameters between PZT and Ir, but on the stress caused by the difference in the thermal expansion coefficients of MgO and Si.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
