Crystal growth and thermodynamics of n-type Bi 2(Te 1− xSe x) 3 single crystal solid solutions ( x ⩽ 0.05)

Abstract

Bi 2(Te 1− x Se x) 3 single crystal solid solutions with x = 0.025 and x = 0.05 have been grown using the travelling heater method. The first step of this work was the study of the BiTeSe ternary phase diagram on the Bi 2Te 3-rich side and with excess tellurium. The isoconcentration lines for these two compositions have been determined for temperatures ranging from 550 °C to their melting points. The knowledge of this phase diagram allows us to grow homogeneous ingots of high crystalline quality. The solidus line on the Te-rich side for these compositions has been determined by Hall effect measurements. This study shows that it is possible to grow thermodynamically well-defined single crystals in a reproducible way.