Growth of n-type Bi 2 Te 2.55 Se 0.45 single crystal solid solution by the Travelling Heater Method

Abstract

Bi 2 Te 2.55 Se 0.45 single crystal solid solution has been grown using the Travelling Heater Method. This method requires the knowledge of the phase diagram, so the first step of this work was studying the Bi Te Se ternary phase diagram in order to determine the isoconcentration line of the Bi 2 Te 2.55 Se 0.45 solid solution within a 550 °C–590 °C temperature range. The knowledge of this phase diagram allows us to thermodynamically grow homogeneous ingots. The solidus line has been determined in terms of deviations from the stoichiometry, on the Te rich side, by Hall effect measurements.