Abstract
This article reports on a comprehensive study of critical dimension (CD) error analysis for the 0.13 μm generation and beyond. Systematic CD distribution is extracted by averaging nine wafers. The remaining noise signals are treated as random CD errors. Systematic CD error is further broken down into intra- and interfield CD errors by Fourier analysis. Interfield CD error is brought in comparison with the temperature distribution of postexposure bake hot plate, and they are found in good match. A polynomial expansion method further decomposes the interfield distribution into tilt and spiral parts, which are supposedly contributed by hot-plate and spin modules. The random CD error is also analyzed in this article.
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