Coupling effect of the electric and temperature fields on the growth of nanocrystalline copper films

Abstract

The effect of an external static electric field on the grain growth in nanocrystalline Cu films was studied at different annealing temperatures. Transmission electron microscopy and x-ray diffraction indicate that the grain growth in Cu films is accelerated with various rates by an external electric field at different annealing temperatures. It is found that there is a coupling effect from the external electric and temperature fields on grain growth in Cu films during annealing. The growth rate is accelerated proportional to a factor $f(E)\ensuremath{\cdot}{\ensuremath{\mu}}^{T/100\text{ }\ifmmode^\circ\else\textdegree\fi{}\text{C}}$, which is determined from the theoretical derivation. The analysis indicates that the enhanced grain growth is achieved by the effect of the electric field on the vacancies migration and dislocation climb along grain boundaries.