Abstract
A coupled fully three-dimensional process and device simulation of an advanced NMOS transistor using new 3D process simulation tools was performed. A POCKET doping resulting from large angle tilted implantation was included in the process flow. 3D effects originating from the non planar 3D mask have been analyzed. Simulation of the transfer characteristics shows a remarkable influence of 3D device and process features on electrical device behavior. A lower sensitivity to substrate bias has been observed in the 3D device compared to standard 2D simulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
