Correlations between process parameters, chemical structure and electronic properties of amorphous hydrogenated Ge xC 1−x films prepared by plasma-enhanced chemical vapour deposition in a three-electrode reactor

Abstract

A new type of reactor for plasma deposition activated by audio frequency with three parallel electrodes is presented. The reactor was tested for deposition of amorphous hydrogenated Ge xC 1−x films frm organogermanium compounds. It was found that small changes of a coupling capacity in the system can cause a step change in the electronic structure of deposited films. Such a change, however, was not manifested by the molecular structure and only monotonic changes of Ge content and cross-linking were observed. The step change in the electronic structure was attributed to the amorphous semiconductor-amorphous dielectric transition.