Abstract
Electronic properties of amorphous hydrogenated carbon-tin films (a-Sn x C y :H) plasma-deposited in a three-electrode reactor have been investigated. It has been found that small changes in the parameter V (−), describing the ion impact energy in the deposition process, cause a drastic change in the electronic structure of the films. This effect is attributed to the amorphous insulator-amorphous semiconductor transition. To understand the nature of the transition effect better, investigations of a structure transformation process, taking place in the semiconducting films under the influence of oxygen, have been performed.
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