Abstract
Electronic properties of amorphous hydrogenated films produced by plasma deposition (PECVD) from organic compounds of carbon family (tetraalkyls of Si, Ge, Sn, and Pb) in an a.f. three-electrode reactor, have been investigated. It has been found that small changes in the parameter V (-) cause a dramatic change in the electronic structure of the films. This effect is attributed to a transition between amorphous insulator and amorphous semiconductor.
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